MIMMG50J120U 1200v 50a igbt module r oh s c om plia nt fea t ures ultra lo w l o ss high r u g g e dness high s hort circuit c a p a bilit y positive t e mperatur e coe f ficient electrically isolated b y d b c ceramic popu lar sot -227 packa g e applica t ions invertor conv ertor w elder smps and ups inductio n h eatin g absolut e maximum ra tings t c = 25c u n less other w i se specifi e d t i n u s e u l a v s n o i t i d n o c t s e t r e t e m a r a p l o b m y s igbt v c e s v 0 0 2 1 e g a t l o v r e t t i m e - r o t c e l l o c v ges gate - emitter v o lt age 20 v t c a 0 8 c 5 2 = i c dc col l ector c u rrent t c a 0 5 c 0 8 = t c = 25c, t p = 1 ms 170 a i c pul s pulse d col l ect o r curre nt t c = 80c, t p = 1 ms 1 10 a p t o t w 0 6 3 t b g i r e p n o i t a p i s s i d r e w o p t j c 0 5 1 + o t 0 4 - e g n a r e r u t a r e p m e t n o i t c n u j t s t g c 5 2 1 + o t 0 4 - e g n a r e r u t a r e p m e t e g a r o t s v iso l v 0 0 0 3 n i m 1 = t , c a e g a t l o v t s e t n o i t a l u s n i free-wheeling diode v rrm v 0 0 2 1 e g a t l o v e s r e v e r e v i t i t e p e r t c a 0 9 c 5 2 = i f(a v ) a vera ge fo r w a rd curre nt t c a 0 6 c 0 8 = i f(rms) a 0 9 t n e r r u c d r a w r o f s m r t j = 45c , t= 10ms, sine 430 a i fsm non-r e p e ti tive surge f o r w a rd c u rre nt t j = 45c, t= 8.3 ms, sine 450 a
MIMMG50J120U electrical charact e r ist i cs t c = 25c unl ess other w i se specifi ed thermal and mechanica l charac t eristics sy mbol pa rame ter t est condit i o n s min. t y p. max. unit igbt v ge( t h ) ga te - emitter t h reshold v o l t age v c e = v g e , i c = 2 ma 5 6.2 7 v i c = 50a, v g e = 1 5 v , t j = 25c 1.8 v v c e (sa t ) collector - emitter saturatio n v o l t age i c = 50a, v g e = 1 5 v , t j = 125c 2.0 v v c e = 1200 v , v g e = 0 v , t j = 25c 0.5 ma i c e s coll ector l e a k age c u rrent v c e = 1200 v , v g e = 0 v , t j = 125c 2 ma i ges gate leak age current v c e = 0 v , v g e = 20v -200 200 na q g e gate charge v c c = 600 v , i c =50a, v g e = 15v 6 1 1 nc c i e s f n 9 2 . 4 e c n a t i c a p a c t u p n i c oes ou tput cap a c i t ance 0 . 30 n f c r e s revers e t ransfer cap a c i t anc e v c e = 25v , v g e = 0 v , f =1mhz 0 . 20 n f t d ( on) s n 0 7 2 e m i t y a l e d n o - n r u t t r s n 0 6 e m i t e s i r t d ( o f f ) s n 0 8 4 e m i t y a l e d f f o - n r u t t f fall t i me v c c = 600 v , i c =50a r g =1 8 , v g e = 15v t j = 25c inductive l o ad 60 n s t d ( on) s n 0 9 2 e m i t y a l e d n o - n r u t t r s n 0 6 e m i t e s i r t d ( o f f ) s n 0 5 5 e m i t y a l e d f f o - n r u t t f fall t i me v c c = 600 v , i c =50a r g =1 8 , v g e = 15v t j = 125c inductive l o ad 65 n s 6 .0 mj e o n t u rn - on s w itc h i n g ener g y 8 .4 mj 3 .7 mj e o f f t u rn - o f f s w i tchin g ener g y v c c = 600 v , i c =50a t j = 25 c r g =1 8 t j = 125c v g e = 15v t j = 25 c inductive l o a d t j = 125c 5 .8 mj free-wheeling diode i f = 50a, v g e = 0 v , t j = 25c 1.9 2.3 v v f f o r w ard v olt age i f = 50a, v g e = 0 v , t j = 125c 1.7 2.1 v t r r s n 0 8 1 e m i t y r e v o c e r e s r e v e r i rrm a 0 6 t n e r r u c y r e v o c e r e s r e v e r . x a m q r r revers e reco ver y c har ge i f = 50a, v r = 800v d i f /d t= -100 0a/ s t j = 125c 7 . 1 c sy mbol para mete r t est condit i o n s min. t y p. max. unit r thjc junctio n -to-ca se t hermal r e sist ance per igb t 0.35 k / w r t hjcd junctio n -to-ca se t hermal r e sist ance per inverse d i ode 0.65 k / w t orque modu le-to-si n k recomme n d e d m4 0.7 1.1 n m t orque modu le electro des recomme n d e d m4 0.7 1.4 n m w e ight 27 g
MIMMG50J120U i c (a) v c e (sa t ) v f i gure 1 . t y pic a l output charac teristics t j =125c t j =25c 100 80 60 40 20 0 0 0.5 1 1 . 5 2 2.5 3 3.5 1 5 1 8 v g e v f i gure 2 . t y pic a l t ransfer char a cteristics 1 4 12 10 8 6 4 2 0 0 2 0 i c (a) 4 0 6 0 8 0 100 v ce =20v e o n e o f f ( mj ) 60 50 40 30 20 10 0 25 75 i c a f i gure 3 . s w itc h in g ener g y vs . collector c u rr ent v cc = 600v r g = 18ohm v g e = 15v t j =125c e o n e o f f 175 150 125 100 50 0 1 2 9 6 3 0 0 1 0 2 0 3 0 40 50 60 e o n e o f f ( mj ) e o n e o f f r g ohm f i gure 4 . s w itc h i n g ener g y vs. gate resistor 7 0 v cc = 600v i c =50 a v g e = 15v t j = 125 c t ( n s ) 1 0 3 1 0 2 0 20 60 i c a figure 5 . s w itc h in g t i mes vs. coll ector curr e n t v cc = 600v r g = 18ohm v g e = 15v t j =125c t d ( o f f ) 140 120 100 80 40 0 1 0 1 0 1 0 2 0 3 0 40 50 60 r g ohm figure6. s w itc h ing t i mes vs. gate resistor 7 0 v cc =600v i c =50 a v g e = 15v t j =125c t ( n s ) 1 0 3 1 0 2 t d ( o n ) t r t f t d ( o f f ) t d ( o n ) t f t r t j =125c t j =25c
MIMMG50J120U i c p u l s ( a ) t j =150c t c =25c v g e =15v c ( n f ) v c e v f i gure 8 . t y pic a l cap a c i t anc e s vs. v c e v g e (v) q g c f i gure 7 . ga te char ge char a c teristics 0 20 25 10 15 5 0.1 0 0 . 2 0.3 0.4 0.5 v g e =0v f=1mh z c ies c o e s c res 0.1 1 1 0 0 5 1 0 1 5 20 25 30 3 5 t c case t e mp erature( c ) f i gure1 1. rate d curre nt vs. t c i c ( a ) t j =150c v g e 15v 0 125 150 175 50 7 5 100 100 20 40 60 80 0 25 100 0 200 160 120 80 40 0 200 600 v c e v f i gure 9 . reve r se biase d sa fe opera ting are a 140 0 120 0 100 0 800 400 0 800 600 400 200 0 0 200 400 600 800 100 0 120 0 v c e v f i gure 10. shor t circuit sa fe opera ti ng are a 140 0 i csc ( a ) t j =150c t c =25c v g e =15v t s c 10 s t j =25c t j =125c v f v f i gure 12. diode fo r w a rd c h a ra cte ri sti cs 0 0 2 5 7 5 100 150 125 0.5 5 0 1. 0 1 . 5 2.0 2.5 3 3.5 i f ( a ) v cc = 600v i c =50 a t j =25c
MIMMG50J120U z t hjc ( k/w ) rect a n gul ar pulse d u ratio n (secon ds) f i gure 13. t ransient t hermal imped ance of igbt dut y 0.5 0.2 0.1 0.05 single p ulse 1 0 - 4 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 1 0 - 3 1 0 - 2 1 0 - 1 1 1 1 1 0 - 1 1 0 - 1 1 0 - 2 1 0 - 2 1 0 - 3 1 0 - 3 1 0 - 4 1 0 - 4 z t hjc ( k/w ) rect a n gul ar pulse d u ratio n (secon ds) f i gure 14. t ransient t hermal imped ance of diod e dimens i o ns in mm f i gure 15. pack age outli nes dut y 0.5 0.2 0.1 0.05 single p ulse
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